Heat transfer in composite materials with Stefan–Boltzmann interface conditions

In this paper, we discuss nonstationary heat transfer problems in composite materials. This problem can be formulated as the parabolic equation with Stefan–Boltzmann interface conditions. It is proved that there exists a unique global classical solution to one‐dimensional problems. Moreover, we propose a numerical algorithm by the finite difference method for this nonlinear transmission problem. Copyright © 2007 John Wiley & Sons, Ltd.     

Synthesis and characterization of new fluorescent poly(arylene ether)s

The poly(arylene ether)s were prepared by the nucleophillic aromatic substitution polymerization of phenolphthalin and its derivatives with activated aromatic difluorides. The polymers had glass transition temperatures ranging from 210 to 240°C. Though the monomers have no fluorescence, the resulting polymers fluoresced a light green color in solid and solution states. The maximum excitation and emission wavelengths are 420 nm and 470 nm, respectively. In the polymer solutions, the fluorescence intensity decreased gradually, but the intensity was recovered by heating the polymer at 220°C for a few minutes. The fluorescent polymer had a stable radical. A model compound having the same repeating unit of the polymer was also prepared. The fluorescence properties of this model were almost the same as those of the polymers. © 1994 John Wiley & Sons, Inc.     

Pulsed polarization gradient cooling in an optical dipole trap with a Laguerre-Gaussian laser beam

We utilized a blue-detuned Laguerre-Gaussian (doughnut) laser beam to trap cold rubidium atoms by optical dipole force. ”Pulsed” polarization gradient cooling was applied to the trapped atoms to suppress the trap loss due to heating caused by random photon scattering of the trapping light. In this trap about 10⁸ atoms were initially captured and the trap lifetime was 1.5 s, which was consistent with losses due to background gas collisions. This trap can readily be applied to atom guiding, compression, and evaporative cooling. Received: 10 July 1997 / Received in final form: 5 January 1998 / Accepted: 16 January 1998     

A 128 × 128 Pixel Complementary Metal Oxide Semiconductor Image Sensor with an Improved Pixel Architecture for Detecting Modulated Light Signals

A complementary metal oxide semiconductor (CMOS) image sensor for the detection of modulated light under background illumination has been developed. When an object is illuminated by a modulated light source under background illumination the sensor enables the object alone to be captured. This paper describes improvements in pixel architecture for reducing fixed pattern noise (FPN) and improving the sensitivity of the image sensor. The improved 128 × 128 pixel CMOS image sensor with a column parallel analog-to-digital converter (ADC) circuit was fabricated using 0.35-mm CMOS technology. The resulting captured images are shown and the properties of improved pixel architecture are described. The image sensor has FPN of 1/28 that of the previous image sensor and an improved pixel architecture comprising a common in-pixel amp and a correlated double sampling (CDS) circuit. The use of a split photogate increases the sensitivity of the image sensor to 1.3 times that of the previous image sensor.     

Synthesis of silicon-functionalized 7-silanorbornadienes and their thermolysis and photolysis

A series of 7-silanorbornadienes were prepared and characterized by X-ray crystallographic analysis. 2,3-Benzo-7-mesityl-1,4,5,6-tetraphenyl-7-silanorbornadiene (1a) was prepared by the [4+2] cycloaddition reaction of 1-mesityl-2,3,4,5-tetraphenyl-1-sila-2,4-cyclopentadiene (4) with benzyne. 7-Hydro 1a was converted into 7-chloro-substituted silanorbornadiene 1b. Treatment of 1b with lithium phenylamide and lithium phenylthiolate gave 7-phenylamino-substituted silanorbornadiene 1c and 7-phenylthio-substituted silanorbornadiene 1d, respectively. Reductive lithiation of 1b with lithium naphthalenide afforded 7-lithiated silanorbornadiene 1f, which reacted with chlorotrimethylsilane to give 7-trimethylsilyl-substituted silanorbornadiene 1e. Stereochemistry at the bridging silicon during these transformations was determined by X-ray crystallographic analysis. Thermolysis of 1 produced corresponding silylenes 5, which were trapped with triethylsilane to give disilanes 6. Photolysis of 1 except 1c also afforded corresponding silylenes 5. Theoretical calculation of the models of silanorbornadienes was performed at the MP2/6-31+G(d, p) level.     

Fluorescent visualization of the conformational change of aromatic amide or urea induced by N-methylation

The conformational change of amide structure of benzanilide or urea structure of N,N′-diphenylurea induced by methylation of the secondary nitrogen was visualized by introduction of pyrene moieties on the benzene ring. In contrast to the extended trans-form of secondary amide and urea, which showed monomer fluorescence emission of pyrene, the corresponding N-methylated compounds exist in cis-form, which exhibited excimer emission.     

An Integrated Circuit for Two-Dimensional Edge-Detection with Local Adaptation Based on Retinal Networks

We designed an integrated circuit for edge detection of a two-dimensional image based on the vertebrate outer retina, which has wide dynamic range in image processing. The unit circuit is simple, and operates as a current-mode analog metal-oxide-semiconductor (MOS) circuit. In order to extract edges from an image composed of bright and dark domains, the circuit realizes a function called local adaptation in which the sensitivity adapts to local brightness of the image. Simulation results, using the simulation program with integrated circuit emphasis (SPICE), of two-dimensional Gaussian-distributed images in which the intensity ranged over four orders of magnitude, showed the local adaptation. As a result, the intensity of output images was in the range of one order of magnitude. Furthermore, as the simulation result of real images, it was shown that edges in the dark domain, which was five times darker than the bright domain, were successfully detected as the bright domain in which input photocurrents ranged over two orders of magnitude.